PRODUCTS CENTER
①
TW: N-channel SiC MOSFET
② Max, on-resistance
(at max drive conditions)
069 = 69 mΩ
③ Package
J : TO-3P(N)
④ Drain-source voltage(VDSS):
Display value × 10 times = VDSS
120:1200 V
⑤ Series
A: SiC MOSFET(Generation information)