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SSM3J36TU
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SSM3J36TU
Small-signal MOSFET
产品概要
| Application Scope | Power Management Switches |
|---|---|
| Polarity | P-ch |
| Generation | U-MOSⅢ |
| Internal Connection | Single |
| AEC-Q101 | Conform(*) |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 日本 / 泰国 |
*: For detail information, please contact to our sales.
封装类型
| Toshiba Package Name | UFM |
|---|---|
| Package Image | |
| Pins | 3 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
2.0×2.1×0.7 |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage | VDSS | -20 | V |
| Gate-Source voltage | VGSS | +/-8 | V |
| Drain current | ID | -330 | mA |
| Power Dissipation | PD | 0.5 | W |
产品特性
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Gate threshold voltage (Max) | Vth | - | -1.0 | V |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 1.31 | Ω |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=2.8V | 1.6 | Ω |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.8V | 2.7 | Ω |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.5V | 3.6 | Ω |
| Input capacitance (Typ.) | Ciss | - | 43 | pF |
| Total gate charge (Typ.) | Qg | VGS=-4V | 1.2 | nC |
