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MT3S111TU
Radio-frequency SiGe Heterojunction Bipolar Transistor
产品概要
| Application Scope | VHF/UHF band low noise, low distortion amplifier |
|---|---|
| Polarity | NPN |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 日本 / 泰国 |
封装类型
| Toshiba Package Name | UFM |
|---|---|
| Package Image | |
| Pins | 3 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
2.0×2.1×0.7 |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Collector Current | IC | 0.1 | A |
| Collector power dissipation (mounted on board) | PC | 800 | mW |
| Junction temperature | Tj | 150 | ℃ |
| Collector-emitter voltage | VCEO | 6 | V |
产品特性
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Insertion Gain (Typ.) | |S21|2 | f=1GHz | 12.5 | dB |
| Transition frequency (Typ.) | fT | - | 10 | GHz |
| Noise Figure (Typ.) | NF | f=1GHz | 0.85 | dB |